THE REDUCTION OF OXYGEN AT ILLUMINATED P-GAAS - FURTHER EVIDENCE FOR A CURRENT DOUBLING MECHANISM

被引：26

作者：

LI, J ^{[1
]}

PEAT, R ^{[1
]}

PETER, LM ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT CHEM,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1986年 / 200卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(86)90065-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：333 / 340

页数：8

相关论文

共 14 条

[1] BAXENDALE JH, 1964, RADIAT RES S, V4, P114
[2] HOLE INJECTION AND SURFACE STATE EFFECTS AT GALLIUM-ARSENIDE ELECTRODES
BENARD, DJ
HANDLER, P
[J]. SURFACE SCIENCE, 1973, 40 (01) : 141 - 148
[3] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
GARTNER, WW
[J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87
[4] STUDY OF SOLID-SURFACES BY ELECTROCHEMICAL METHODS
GERISCHER, H
KOLB, DM
SASS, JK
[J]. ADVANCES IN PHYSICS, 1978, 27 (03) : 437 - 498
[5] ON THE MECHANISM OF HYDROGEN EVOLUTION AT GAAS ELECTRODES
GERISCHER, H
MULLER, N
HAAS, O
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1981, 119 (01): : 41 - 48
[6] CHARGE TRANSFER PROCESSES AT SEMICONDUCTOR-ELECTROLYTE INTERFACES IN CONNECTION WITH PROBLEMS OF CATALYSIS
GERISCHER, H
[J]. SURFACE SCIENCE, 1969, 18 (01) : 97 - +
[7] SURFACE CHARGING EFFECTS DURING PHOTOANODIC DISSOLUTION OF N-GAAS ELECTRODES
KELLY, JJ
NOTTEN, PHL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2452 - 2459
[8] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .2. PHOTOINDUCED NEAR-SURFACE RECOMBINATION CENTERS IN P-GAP
LI, J
PEAT, R
PETER, LM
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 165 (1-2): : 41 - 59
[9] THE REDUCTION OF OXYGEN AT ILLUMINATED P-GAP - EVIDENCE FOR A CURRENT DOUBLING MECHANISM
LI, J
PETER, LM
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1985, 182 (02): : 399 - 411
[10] MECHANISM OF ELECTROCHEMICAL REDUCTION OF PERSULFATES AND HYDROGEN PEROXIDE
MEMMING, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 785 - &