INSITU FOURIER-TRANSFORM INFRARED-SPECTROSCOPY OF ELECTROCHEMICAL PROCESSES AT THE SILICON ACETONITRILE INTERFACE

被引：7

作者：

BOONEKAMP, EP ^{[1
]}

KELLY, JJ ^{[1
]}

VANDERVEN, J ^{[1
]}

SONDAG, AHM ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1993年 / 344卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(93)80055-M

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A new approach is used for the study of the semiconductor-solution interface with Fourier transform IR spectroscopy (FTIRS) in the multiple total internal reflection mode. In this method, a thin semiconductor wafer is mounted on a germanium internal reflection crystal by wafer-bonding. Measurements are possible in a wide frequency range (800-4000 cm-1). The potential of the method is demonstrated by measurements on the anodic oxidation in acetonitrile containing a low concentration water of n-type silicon (111) surfaces pretreated in hydrofluoric acid solution. The experiments show that detection of surface bound species (Si-H, Si-O-Si) is possible with submonolayer sensitivity.

引用

页码：187 / 198

页数：12

共 30 条

[1] INFRARED SPECTROELECTROCHEMISTRY [J].