LOW-TEMPERATURE PHOTOLUMINESCENCE OF SIGE/SI DISORDERED MULTIPLE-QUANTUM WELLS AND QUANTUM-WELL WIRES

被引：14

作者：

LEE, J

LI, SH

SINGH, J

BHATTACHARYA, PK

机构：

[1] Department of Electrical Engineering and Computer Science, University of Michigan, Solid-State Electronics Laboratory, Ann Arbor, 48109-2122, MI

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 08期

关键词：

PHOTOLUMINESCENCE; QUANTUM WELL WIRES; SIGE/SI QUANTUM WELLS;

D O I：

10.1007/BF02651380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature photoluminescence from disordered SiGe/Si quantum wells and quantum wires made from periodic quantum wells by electron beam lithography and reactive ion etching has been measured. No enhancement in luminescence is seen, compared to that in periodic quantum wells, in the disordered wells or quantum wires. New transitions are observed in the wire luminescence, including a possible no-phonon transition exhibiting a 32 meV blue shift compared to the same transition in the wells.

引用

页码：831 / 833

页数：3

共 20 条

[1] A SOLUTION FOR PRESSURE VARIATIONS IN VACUUM PROCESS TOOLS DUE TO PRESSURE REGULATOR FLUCTUATIONS [J].

FOURNIER, JP ;

PASSOW, ML ;

COTLER, TJ ;

ELTA, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (02) :358-359

[2] SPECTRAL BLUE SHIFT OF PHOTOLUMINESCENCE IN STRAINED-LAYER SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY [J].

FUKATSU, S ;

YOSHIDA, H ;

FUJIWARA, A ;

TAKAHASHI, Y ;

SHIRAKI, Y ;

ITO, R .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :804-806

[3] CARRIER VELOCITY-FIELD CHARACTERISTICS AND ALLOY SCATTERING POTENTIAL IN SI1-XGEX/SI [J].

LI, SH ;

HINCKLEY, JM ;

SINGH, J ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1993, 63 (10) :1393-1395

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI1-XGEX/SI PSEUDOMORPHIC LAYERS USING DISILANE AND GERMANIUM [J].

LI, SH ;

BHATTACHARYA, PK ;

MALIK, R ;

GULARI, E .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (07) :793-795

[5] INTENSE PHOTOLUMINESCENCE BETWEEN 1.3-MU AND 1.8-MU-M FROM STRAINED SI1-XGEX ALLOYS [J].

NOEL, JP ;

ROWELL, NL ;

HOUGHTON, DC ;

PEROVIC, DD .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1037-1039

[6] LUMINESCENCE ORIGINS IN MOLECULAR-BEAM EPITAXIAL SI1-XGEX [J].

NOEL, JP ;

ROWELL, NL ;

HOUGHTON, DC ;

WANG, A ;

PEROVIC, DD .

APPLIED PHYSICS LETTERS, 1992, 61 (06) :690-692

[7] LUMINESCENCE FROM SI/SI1-XGEX HETEROSTRUCTURES AND SUPERLATTICES [J].

NORTHROP, GA ;

WOLFORD, DJ ;

IYER, SS .

APPLIED PHYSICS LETTERS, 1992, 60 (07) :865-867

[8] NEAR-BAND-GAP PHOTOLUMINESCENCE FROM PSEUDOMORPHIC SI1-XGEX SINGLE LAYERS ON SILICON [J].

ROBBINS, DJ ;

CANHAM, LT ;

BARNETT, SJ ;

PITT, AD ;

CALCOTT, P .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) :1407-1414

[9] OPTICAL-ABSORPTION EVIDENCE OF A QUANTUM SIZE EFFECT IN POROUS SILICON [J].

SAGNES, I ;

HALIMAOUI, A ;

VINCENT, G ;

BADOZ, PA .

APPLIED PHYSICS LETTERS, 1993, 62 (10) :1155-1157

[10] EFFECT OF STRUCTURAL DISORDER ON ELECTRONIC STATES IN GAAS/ALGAAS QUANTUM WIRES [J].

SINGH, J .

APPLIED PHYSICS LETTERS, 1991, 59 (24) :3142-3144

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