NARROW-LINE, LOW-AMPLITUDE NOISE SEMICONDUCTOR-LASER OSCILLATOR IN THE 780-NM RANGE

被引:14
作者
HILICO, L [1 ]
TOUAHRI, D [1 ]
NEZ, F [1 ]
CLAIRON, A [1 ]
机构
[1] OBSERV PARIS,BNM,PRIMAIRE TEMPS & FREQUENCES LAB,F-75014 PARIS,FRANCE
关键词
D O I
10.1063/1.1144483
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present a narrow-band and low-intensity noise laser oscillator around 780 nm built from a commercially available laser diode. We have stabilized the frequency of two extended cavity diode lasers on the same high finesse Fabry-Pérot cavity using a wide-band electronic feedback loop. We have reduced the relative linewidth of the two lasers down to 570 Hz and strongly concentrated their energy: 95% in a relative bandwidth smaller than 10 kHz. The intensity noise of this device corresponds to the shot noise for Fourier frequencies larger than a few megaHertz. © 1994 American Institute of Physics.
引用
收藏
页码:3628 / 3633
页数:6
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