DIFFUSION OF ZN INTO GAAS UNDER PRESENCE OF EXCESS ARSENIC VAPOR

[1] THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 134 - &

[2] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 127 - 133

[3] GOLDSTEIN B, 1960, PHYS REV, V118, P1024

[4] KENDALL DL, 1961, AIEEIRE DEVICE RESEA

[5] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130

[6] IONIZATION INTERACTION BETWEEN IMPURITIES IN SEMICONDUCTORS AND INSULATORS [J]. PHYSICAL REVIEW, 1956, 102 (04): : 992 - 999

[7] PEARSON GL, 1963, MAR B M PHYS SOC ST

[8] SHEWMAN PG, 1963, DIFFUSION SOLIDS

[9] VAPOR PHASE EQUILIBRIA FOR THE SYSTEMS - GAAS-GALX-ASY AND GA-GALX [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 963 - 968

[10] SILVESTRI VJ, 1961, J PHYS CHEM, V65, P1275

[1] THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 134 - &

[2] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 127 - 133

[3] GOLDSTEIN B, 1960, PHYS REV, V118, P1024

[4] KENDALL DL, 1961, AIEEIRE DEVICE RESEA

[5] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130

[6] IONIZATION INTERACTION BETWEEN IMPURITIES IN SEMICONDUCTORS AND INSULATORS [J]. PHYSICAL REVIEW, 1956, 102 (04): : 992 - 999

[7] PEARSON GL, 1963, MAR B M PHYS SOC ST

[8] SHEWMAN PG, 1963, DIFFUSION SOLIDS

[9] VAPOR PHASE EQUILIBRIA FOR THE SYSTEMS - GAAS-GALX-ASY AND GA-GALX [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 963 - 968

[10] SILVESTRI VJ, 1961, J PHYS CHEM, V65, P1275