CHARGE CARRIER INERTIA IN SEMICONDUCTORS

被引:64
作者
CHAMPLIN, KS
ARMSTRONG, DB
GUNDERSON, PD
机构
关键词
D O I
10.1109/PROC.1964.3049
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:677 / +
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共 20 条
[1]  
ARMSTRONG DR, TO BE PUBLISHED
[2]   MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF HOLES IN GERMANIUM [J].
BENEDICT, TS .
PHYSICAL REVIEW, 1953, 91 (06) :1565-1566
[3]  
BENEDICT TS, 1953, PHYS REV, V89, P1151
[4]   FREQUENCY DEPENDENCE OF HIGH-FREQUENCY TRANSPORT PROPERTIES OF CUBIC CRYSTALS [J].
CHAMPLIN, KS .
PHYSICAL REVIEW, 1963, 130 (04) :1374-+
[5]  
CHAMPLIN KS, 1961, P IRE, V50, P232
[6]   MICROWAVE DETERMINATION OF THE AVERAGE MASSES OF ELECTRONS AND HOLES IN GERMANIUM [J].
GOLDEY, JM ;
BROWN, SC .
PHYSICAL REVIEW, 1955, 98 (06) :1761-1763
[7]  
GUNDERSON PD, 1962, THESIS U MINNESOTA
[8]  
HENDRICKSON KE, 1963, THESIS U MINNESOTA
[9]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290
[10]   ELECTRODELESS MEASUREMENT OF SEMICONDUCTOR RESISTIVITY AT MICROWAVE FREQUENCIES [J].
JACOBS, H ;
BRAND, FA ;
BENJAMIN, R ;
MEINDL, JD ;
BENANTI, M .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (05) :928-&