INFLUENCE OF DOPING ON THE LIQUID-AMORPHOUS TRANSITION INDUCED BY PICOSECOND LASER IRRADIATION OF SI

被引：4

作者：

CAMPISANO, SU ^{[1
]}

BAERI, P ^{[1
]}

ZHANG, JP ^{[1
]}

RIMINI, E ^{[1
]}

MALVEZZI, AM ^{[1
]}

机构：

[1] CTR INFORMAZ STUDI ESPERIENZE,MILANO,ITALY

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 04期

关键词：

D O I：

10.1063/1.94341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：370 / 372

页数：3

共 12 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2]

CAMPISANO SU, 1983, APPL PHYS A, V30, P1

[3]

Cullis A. G., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P131

[4] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P .

PHYSICAL REVIEW LETTERS, 1982, 49 (03) :219-222

[5]

CULLIS AG, UNPUB LASER SOLID IN

[6] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI [J].

GALVIN, GJ ;

THOMPSON, MO ;

MAYER, JW ;

HAMMOND, RB ;

PAULTER, N ;

PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1982, 48 (01) :33-36

[7] OPTICAL-PROPERTIES OF HEAVILY DOPED SILICON BETWEEN 1.5 AND 4.1 EV [J].

JELLISON, GE ;

MODINE, FA ;

WHITE, CW ;

WOOD, RF ;

YOUNG, RT .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1414-1417

[8]

KEAR BH, 1982, RAPIDLY SOLIDIFIED A

[9] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J].

LIU, PL ;

YEN, R ;

BLOEMBERGEN, N ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :864-866

[10]

SPAEPEN F, 1982, LASER ANNEALING SEMI, pCH2

← 1 2 →