TRANSISTOR PERFORMANCE OF HIGH-T-C 3 TERMINAL DEVICES BASED ON CARRIER CONCENTRATION MODULATION

被引：6

作者：

JOOSSE, K

BOGUSLAVSKIJ, YM

VARGAS, L

GERRITSMA, GJ

ROGALLA, H

机构：

[1] University of Twente, Faculty of Applied Physics, Enschede, P.O. Box 217

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/77.403194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-T-c materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements.

引用

页码：2883 / 2886

页数：4

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