ION-PLASMA SPUTTERING AS A METHOD OF INTRODUCING SOLID MATERIAL INTO AN ELECTRON-CYCLOTRON-RESONANCE ION-SOURCE

被引：40

作者：

HARKEWICZ, R

BILLQUIST, PJ

GREENE, JP

NOLEN, JA

PARDO, RC

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.1146501

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A direct ion plasma sputtering effect has been observed in an electron cyclotron resonance ion source and developed into a reliable and simple method for producing ion beams from some solid materials. We describe the ion sputtering technique used with the Argonne Tandem Linac Accelerator System Positive Ion Injector Electron Cyclotron Resonance ion source to produce, to date, stable beams of nickel, silver, tellurium, gold, lead, and bismuth and present the results obtained in test cases. © 1995 American Institute of Physics.

引用

页码：2883 / 2887

页数：5