AN ANALYTICAL MODEL FOR AC TRANSPORT IN DOUBLE-BARRIER HETEROJUNCTION DIODES

We propose an analytical model for small-signal a.c. transport in double-barrier heterojunction diodes (DBDs). The model relies on the transfer-Hamiltonian method as modified for systems with harmonic tunneling potentials. Band structure, double-barrier geometry, and position of quasi-Fermi energies incorporate directly into the model. Salient features of the DBD frequency response arise from a frequency-dependent integration kernel, in the form of an overlap matrix element. A new prediction of the model is finite response beyond the quasi-static limit Δε{lunate} h {combining short stroke overlay} (where Δε{lunate} is the resonance energy width) due to transitions between quasi-bound states. © 1990.