GAAS SCHOTTKY VARACTORS FOR LINEAR FREQUENCY TUNING IN X-BAND

被引：8

作者：

HORVATH, ZJ

GYURO, I

NEMETHSALLAY, M

SZENTPALI, B

KAZI, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 02期

关键词：

D O I：

10.1002/pssa.2210940237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：719 / 726

页数：8

共 14 条

[1] PERFORMANCE AND RELIABILITY OF AN IMPROVED HIGH-TEMPERATURE GAAS SCHOTTKY JUNCTION AND NATIVE-OXIDE PASSIVATION [J].

CALVIELLO, JA ;

WALLACE, JL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :698-704

[2] EPITAXIAL-GROWTH OF GAAS IN CHLORIDE TRANSPORT-SYSTEMS [J].

HEYEN, M ;

BALK, P .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (03) :265-303

[3]

HORVATH Z, 1985, 3RD P MICR S BUD, P321

[4]

HORVATH ZJ, 1985, APR P S EL TECHN, V1, P176

[5]

HORVATH ZJ, 1984, NOV P C PHYS TECHN G

[6]

HORVATH ZJ, 1985, 7TH P CZECH C EL V 3, P747

[7]

Howell C. M., 1980, Elektronika, V21, P29

[8] ELECTRICAL CHARACTERISTICS OF GAAS LPE SCHOTTKY DIODES [J].

KONAKOVA, RV ;

TKHORIK, YA ;

ZAITSEVSKII, IL ;

BENC, V ;

MORVIC, M ;

KORDOS, P ;

CERVENAK, J .

CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (11) :1451-1456

[9] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[10]

MOYSENKO AE, 1982, MICROWAVE J, V25, P99

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