EXPERIMENTAL-OBSERVATION OF ATTENUATED-TOTAL-REFLECTION SPECTRA OF A GAAS/ALAS SUPERLATTICE

被引:35
作者
HARAGUCHI, M [1 ]
FUKUI, M [1 ]
MUTO, S [1 ]
机构
[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 02期
关键词
D O I
10.1103/PhysRevB.41.1254
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present the first experimental observation of the attenuated-total- reflection (ATR) spectra of GaAs/AlAs superlattice. The ATR spectra clearly show the excitation of surface-phonon polaritons on the semiconductor superlattice. We have, moreover, evaluated the dielectric parameters of GaAs and AlAs through a theoretical ATR-spectra fit to the experimental ones. These parameters are compared with those reported previously. © 1990 The American Physical Society.
引用
收藏
页码:1254 / 1257
页数:4
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