ABINITIO CALCULATION OF THE LOW-FREQUENCY RAMAN CROSS-SECTION IN SILICON

被引：47

作者：

BARONI, S

RESTA, R

机构：

[1] SCUOLO INT SUPER STUDI AVANZATI,TRIESTE,ITALY

[2] GRP NAZL STRUTTURA MAT,TRIESTE,ITALY

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5969

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5969 / 5971

页数：3

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