INVESTIGATION OF TELLURIUM-IMPLANTED SILICON

被引：20

作者：

LEE, TF ^{[1
]}

PASHLEY, RD ^{[1
]}

MCGILL, TC ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91109

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.321347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：381 / 388

页数：8

共 22 条

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[2]

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[4] Lattice location and dopant behavior of group II and VI elements implanted in silicon [J].

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Meyer, O. ;

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Mayer, J.W. .

Radiation Effects, 1971, 7 (1-2) :17-24

[5]

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JOHANSSON NG, 1970, SOLID STATE ELECTRON, V13, P123, DOI 10.1016/0038-1101(70)90183-8

[7]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[8] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].

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[9]

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[10]

LEE TP, TO BE PUBLISHED

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