LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE USING A NEW SOURCE GAS (HYDROGEN AZIDE)

被引：19

作者：

ISHIHARA, R

KANOH, H

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute, Tokyo, 152, Oh-okayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2A期

关键词：

SILICON NITRIDE; AMORPHOUS SILICON; THIN-FILM TRANSISTORS; CHEMICAL VAPOR DEPOSITION; HYDROGEN AZIDE; TRISILANE;

D O I：

10.1143/JJAP.31.L74

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon nitride films were deposited at temperatures as low as 350-degrees-C by chemical vapor deposition using a new source gas, hydrogen azide (HN3). Silicon nitride film deposited at 425-degrees-C was nitrogen-rich and showed hydrogen content of about 28 atomic%. The breakdown field strength was as high as 8.7 MV/cm and the resistivity was as high as 10(15) OMEGA.cm. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transistor characteristics.

引用

页码：L74 / L77

页数：4

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