REFRACTORY-METAL SILICIDES FOR SELF-ALIGNED GATE MODULATION DOPED N+-(AL,GA)AS/GAAS FIELD-EFFECT TRANSISTOR INTEGRATED-CIRCUITS

被引：14

作者：

CIRILLO, NC

CHUNG, HK

VOLD, PJ

HIBBSBRENNER, MK

FRAASCH, AM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.582961

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1680 / 1684

页数：5

共 7 条

[1] SELF-ALIGNED MODULATION-DOPED (AL,GA)AS/GAAS FIELD-EFFECT TRANSISTORS [J].

CIRILLO, NC ;

ABROKWAH, JK ;

SHUR, MS .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) :129-131

[2]

CIRILLO NC, 1984, OCT P GAAS INT CIRC, P167

[3]

LEE CP, 1983, 41ST P ANN DEV RES C

[4] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[5]

PEI SS, 1983, 42ND P ANN DEV RES C

[6] TEMPERATURE-DEPENDENCE OF THE IV CHARACTERISTICS OF MODULATION-DOPED FETS [J].

VALOIS, AJ ;

ROBINSON, GY ;

LEE, K ;

SHUR, MS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :190-195

[7] TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS [J].

YOKOYAMA, N ;

OHNISHI, T ;

ODANI, K ;

ONODERA, H ;

ABE, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) :1541-1547

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