A STEP-AND-REPEAT X-RAY-EXPOSURE SYSTEM FOR 0.5-MU-PATTERN REPLICATION

被引:14
作者
HAYASAKA, T
ISHIHARA, S
KINOSHITA, H
TAKEUCHI, N
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期
关键词
D O I
10.1116/1.582942
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1581 / 1586
页数:6
相关论文
共 9 条
[1]  
HAYASHI T, 1978, 8TH P S EL ION BEAM, P85
[2]   CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY [J].
IMAMURA, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1628-1630
[3]   POLY (FLUORO METHACRYLATE) AS HIGHLY SENSITIVE, HIGH CONTRAST POSITIVE RESIST [J].
KAKUCHI, M ;
SUGAWARA, S ;
MURASE, K ;
MATSUYAMA, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) :1648-1651
[4]  
LEVINSTEIN HJ, 1982, P TUTORIAL S SEMICON, P155
[5]   SILICON-NITRIDE SINGLE-LAYER X-RAY MASK [J].
SEKIMOTO, M ;
YOSHIHARA, H ;
OHKUBO, T ;
SAITOH, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L669-L672
[6]   HIGH-RESOLUTION PATTERN REPLICATION USING SOFT X-RAYS [J].
SPEARS, DL ;
SMITH, HI .
ELECTRONICS LETTERS, 1972, 8 (04) :102-&
[7]   MOS DEVICE FABRICATION USING X-RAY-LITHOGRAPHY [J].
SUZUKI, K ;
MATSUI, J ;
ONO, T ;
SAITO, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) :2434-2437
[8]   X-RAY-LITHOGRAPHY [J].
YAMAZAKI, S ;
HAYASAKA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :35-40
[9]  
YOSHIHARA H, 1980, 9TH P S EL ION BEAM, P481