THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF A HIGH-ANGLE TILT GRAIN-BOUNDARY IN SI

[1] [Anonymous], 2012, CRYSTAL DEFECTS CRYS

[2] STRUCTURE OF GRAIN-BOUNDARIES IN GERMANIUM [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 15 - 20

[3] BOURRET A, 1979, PHILOS MAG, V39, P409

[4] ELECTRON-DIFFRACTION AND MICROSCOPY STUDIES OF THE STRUCTURE OF GRAIN-BOUNDARIES IN SILICON [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (02): : 441 - 467

[5] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[6] CHADI DJ, PHYS REV B

[7] FOLL H, 1979, PHILOS MAG A, V40, P589, DOI 10.1080/01418617908234861

[8] MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .1. TILT ABOUT (10) [J]. PHYSICA, 1959, 25 (06): : 409 - 422

[9] MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .2. TILT ABOUT (001) AND THEORY [J]. PHYSICA, 1960, 26 (03): : 198 - 208

[10] ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF GE AND SI .1. DENSITY OF STATES AND BAND STRUCTURES [J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2644 - 2657

[1] [Anonymous], 2012, CRYSTAL DEFECTS CRYS

[2] STRUCTURE OF GRAIN-BOUNDARIES IN GERMANIUM [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 15 - 20

[3] BOURRET A, 1979, PHILOS MAG, V39, P409

[4] ELECTRON-DIFFRACTION AND MICROSCOPY STUDIES OF THE STRUCTURE OF GRAIN-BOUNDARIES IN SILICON [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (02): : 441 - 467

[5] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1290 - 1296

[6] CHADI DJ, PHYS REV B

[7] FOLL H, 1979, PHILOS MAG A, V40, P589, DOI 10.1080/01418617908234861

[8] MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .1. TILT ABOUT (10) [J]. PHYSICA, 1959, 25 (06): : 409 - 422

[9] MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .2. TILT ABOUT (001) AND THEORY [J]. PHYSICA, 1960, 26 (03): : 198 - 208

[10] ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF GE AND SI .1. DENSITY OF STATES AND BAND STRUCTURES [J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2644 - 2657