EXCITON EMISSION FROM FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODES

被引：18

作者：

RYALL, MD ^{[1
]}

ALLEN, JW ^{[1
]}

机构：

[1] UNIV ST ANDREWS,SCH PHYS SCI,WOLFSON INST LUMINESCENCE,FIFE,SCOTLAND

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1973年 / 34卷 / 12期

关键词：

D O I：

10.1016/S0022-3697(73)80061-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：2137 / 2141

页数：5

共 16 条

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[3] FREE EXCITON MOTION IN CRYSTALS AND EXCITON-PHONON INTERACTION [J].

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[4]

GROSS EF, 1966, FIZ TVERD TELA+, V8, P1180

[5]

GROSS EF, 1966, FIZ TVERD TELA, V8, P1483

[6] EXCITONS AND ABSORPTION EDGE IN ZNSE [J].

HITE, GE ;

MARPLE, DTF ;

AVEN, M ;

SEGALL, B .

PHYSICAL REVIEW, 1967, 156 (03) :850-&

[7] EDGE AND SELF-ACTIVATED EMISSIONS IN ZINC SELENIDE [J].

IIDA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (01) :177-&

[8] ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODES [J].

LIVINGSTONE, AW ;

TURVEY, K ;

ALLEN, JW .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :351-356

[9]

Markovskii L. Ya., 1969, Optics and Spectroscopy, V27, P167

[10]

MARKOVSKII LY, 1969, OPT SPECTROSC-USSR, V27, P84

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