LINE-TO-GROUND CAPACITANCE CALCULATION FOR VLSI - A COMPARISON

被引:57
作者
BARKE, E
机构
[1] Siemens AG, Munich, West Ger, Siemens AG, Munich, West Ger
关键词
D O I
10.1109/43.3160
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
11
引用
收藏
页码:295 / 298
页数:4
相关论文
共 12 条
[1]   CORRECTION [J].
CHANG, WH .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1977, 25 (08) :712-712
[2]   ANALYTICAL IC METAL-LINE CAPACITANCE FORMULAS [J].
CHANG, WH .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (09) :608-611
[3]  
Dierking W. H., 1982, IEEE Circuits and Systems Magazine, V4, P11, DOI 10.1109/MCAS.1982.6323835
[4]  
ELMASRY MI, 1981, IEEE ELECTRON DEVICE, V3, P6
[5]  
GOERTH J, 1977, ELECTRICAL FEATURES
[6]  
PFEIL J, 1985, CAPACITANCE CALCULAT
[7]  
POWELL S, 1985, P IEEE INT C CAD, P193
[8]   SIMPLE FORMULAS FOR TWO-DIMENSIONAL AND 3-DIMENSIONAL CAPACITANCES [J].
SAKURAI, T ;
TAMARU, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) :183-185
[9]   VLSI CIRCUIT RECONSTRUCTION FROM MASK TOPOLOGY [J].
VANDERMEIJS, NP ;
FOKKEMA, JT .
INTEGRATION-THE VLSI JOURNAL, 1984, 2 (02) :85-119
[10]  
WILHELM W, 1986, SIEMENS FORSCH ENTW, V15, P60