THE EFFECT OF FLUORINE-ATOMS ON SILICON AND FLUOROCARBON ETCHING IN REACTIVE ION-BEAM ETCHING

被引：4

作者：

CHEEKS, TL

RUOFF, AL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574491

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1917 / 1920

页数：4

共 23 条

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[2]

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[8] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

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[9]

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[10]

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