STRUCTURAL-CHANGES INDUCED BY BI DOPING IN N-TYPE AMORPHOUS (GESE3.5)100-XBIX

被引：53

作者：

BHATIA, KL ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-3093(83)90091-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：173 / 177

页数：5

共 5 条

[1] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (06): : 1101 - 1108
[2] NAGELS P, 1981, UNPUB 8TH INT C AM L
[3] 1ST EVIDENCE FOR VIBRATIONAL EXCITATIONS OF LARGE ATOMIC CLUSTERS IN AMORPHOUS-SEMICONDUCTORS
NEMANICH, RJ
SOLIN, SA
LUCOVSKY, G
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (03) : 273 - 276
[4] SPEAR W, 1976, PHILOS MAG, V33, P936
[5] OPTICAL-ABSORPTION EDGE AND RAMAN-SCATTERING IN GEXSE1-X GLASSES
TRONC, P
BRENAC, A
SEBENNE, C
[J]. PHYSICAL REVIEW B, 1973, 8 (12): : 5947 - 5956