INP GAINASP GUIDED-WAVE PHASE MODULATORS BASED ON CARRIER-INDUCED EFFECTS - THEORY AND EXPERIMENT

被引：60

作者：

VINCHANT, JF ^{[1
]}

CAVAILLES, JA ^{[1
]}

ERMAN, M ^{[1
]}

JARRY, P ^{[1
]}

RENAUD, M ^{[1
]}

机构：

[1] LABS ELECTR PHILIPS,F-94453 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1992年 / 10卷 / 01期

关键词：

D O I：

10.1109/50.108738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an overview of the different contributions due to carrier-induced effects which appear in InP/GaInAsP guided-wave phase modulators. We review and calculate the band-filling effect in such devices and point out optimized structures. We report the fabrication of phase modulators and directional coupler switches based on a GaInAsP/InP heterostructure which exhibit modulation characteristics in good agreement with our calculation, having a phase modulation efficiency as high as 11-degrees/V mm and low optical losses.

引用

页码：63 / 70

页数：8

共 20 条

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