FORMATION OF A SUPERLATTICE OF IONIZED RESONANT DONORS OR ACCEPTORS IN SEMICONDUCTORS

被引：113

作者：

MYCIELSKI, J

机构：

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1016/0038-1098(86)90552-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：165 / 168

页数：4

共 11 条

[1] INFLUENCE OF IMPURITIES ON DE HAAS-VAN ALPHEN EFFECT [J].

BRAILSFORD, AD .

PHYSICAL REVIEW, 1966, 149 (02) :456-+

[2]

DOBROWOLSKI W, 1986, UNPUB 18TH P INT C P

[3]

Konczewicz L., 1978, Physics of Narrow Gap Semiconductors, P211

[4] HIGHLY LOCALIZED DONOR STATES IN INSB AND THEIR PRESSURE-DEPENDENCE [J].

KONCZEWICZ, L ;

TRZECIAKOWSKI, W .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 115 (02) :359-367

[5]

MYCIELSKI A, 1986, J PHYS C

[6]

ROTH LM, 1966, SEMICONDUCT SEMIMET, V1, P159

[7] PHOTOLUMINESCENCE ASSOCIATED WITH MULTIVALLEY RESONANT STATES OF N ISOELECTRONIC TRAP IN IN1-XGAXP [J].

SCIFRES, DR ;

ZACK, GW ;

HOLONYAK, N ;

KLEIMAN, GG ;

DUPUIS, RD ;

DUKE, CB ;

KUNZ, AB ;

MACKSEY, HM .

PHYSICAL REVIEW B, 1972, 5 (06) :2206-&

[8]

Serre H., 1982, Physics of Narrow Gap Semiconductors. Proceedings of the 4th International Conference, P321

[9] TEMPERATURE-DEPENDENCE OF THE SHUBNIKOV-DEHAAS EFFECT IN HG1-XFEXSE [J].

VAZIRI, M ;

SCHWARZKOPF, DA ;

REIFENBERGER, R .

PHYSICAL REVIEW B, 1985, 31 (06) :3811-3816

[10] SPIN-DEPENDENT SCATTERING OF CONDUCTION ELECTRONS IN DILUTED MAGNETIC SEMICONDUCTORS - HG1-XFEXSE [J].

VAZIRI, M ;

REIFENBERGER, R .

PHYSICAL REVIEW B, 1985, 32 (06) :3921-3929

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