METAL CONDUCTIVE-POLYMER JUNCTION - AN IN/POLY(N-METHYLPYRROLE) DIODE WITH A TUNNEL SCHOTTKY JUNCTION

被引:24
作者
KURATA, T
KOEZUKA, H
TSUNODA, S
ANDO, T
机构
[1] Mitsubishi Electric Corp, Amagasaki, Jpn, Mitsubishi Electric Corp, Amagasaki, Jpn
关键词
D O I
10.1088/0022-3727/19/4/003
中图分类号
O59 [应用物理学];
学科分类号
摘要
SEMICONDUCTOR DIODES, TUNNEL
引用
收藏
页码:L57 / L60
页数:4
相关论文
共 8 条
[1]  
CHIEN JCW, 1984, POLYACETYLENE
[2]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[3]  
GLEIS S, 1984, THIN SOLID FILMS, V111, P93
[4]   POLYPYRROLE-SEMICONDUCTOR SCHOTTKY BARRIERS [J].
INGANAS, O ;
SKOTHEIM, T ;
LUNDSTROM, I .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3636-3639
[5]   SCHOTTKY-BARRIER TYPE DIODE WITH AN ELECTROCHEMICALLY PREPARED CO-POLYMER HAVING PYRROLE AND N-METHYLPYRROLE UNITS [J].
KOEZUKA, H ;
ETOH, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2511-2516
[6]   X-RAY PHOTOEMISSION SPECTROSCOPY INVESTIGATION OF SCHOTTKY-BARRIER FORMATION IN A COPOLYMER OF PYRROLE AND N-METHYLPYRROLE [J].
OGAMA, T ;
KOEZUKA, H .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1036-1038
[7]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[8]  
WILLIAMS R, 1965, PHYS REV A, V140, P569