CHARGING PROPERTIES OF SIPOS USED AS A PASSIVATION LAYER ON SILICON

被引：2

作者：

LISS, B

LINDGREN, A

ENGSTROM, O

机构：

[1] Department of Solid State Electronics, Chalmers University of Technology

[2] ABB-DRIVES, Dept. TSU

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90196-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The density of electron trap states and their energy distribution have been measured for SIPOS/Si interfaces. By keeping the interface at thermal equilibrium during the measurement, and avoiding the influence from electron leakage through the SIPOS layer, true trap state densities are obtained. We demonstrate that the density of states decreases with the oxygen concentration of SIPOS.

引用

页码：125 / 128

页数：4

共 7 条

[1]

Hamasaki, Adachi, Wakayama, Kikuchi, Sol. State Comm., 21, (1977)

[2]

Werner, Band Tailing in Polycrystalline and Disordered Silicon, Springer Proc. in Physics, 35, (1989)

[3]

Burte, J. Electrochem. Soc., 135, (1988)

[4]

Tong, Benjamin, van Dell, Interface effects of SIPOS passivation, IEEE Transactions on Electron Devices, 33 ED, (1986)

[5]

Taylor, Tong, J. Appl. Phys., 56, (1984)

[6]

Nicollian, Brews, MOS Physics and Technology, (1982)

[7]

Hseih, Greve, J. Appl. Phys., 67, (1990)

← 1 →