OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL

被引：4

作者：

CROWDER, SW ^{[1
]}

GRIFFIN, PB ^{[1
]}

HSIEH, CJ ^{[1
]}

WEI, GY ^{[1
]}

PLUMMER, JD ^{[1
]}

ALLEN, LP ^{[1
]}

机构：

[1] IBIS TECHNOL CORP,DANVERS,MA 01923

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An effective interstitial surface recombination velocity for the buried Si-SiO2 interface in separation by implantation of oxygen (SIMOX) material has been used to accurately model the oxidation-enhanced diffusion of boron and phosphorous in single- and multiple-implant material. The effective recombination velocity at the SIMOX interface was found to be higher than the value for a thermally grown SiO2 interface. The enhancement of the effective recombination velocity is dependent on the material formation conditions and is empirically related to the near-interface dislocation density. Increased surface interfacial area is considered to be the most likely cause for the increased effective recombination velocity.

引用

页码：3264 / 3266

页数：3

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