SILICON IMPLANTED SUPER LOW-NOISE GAAS-MESFET

被引:14
作者
FENG, M [1 ]
EU, VK [1 ]
SIRACUSA, M [1 ]
WATKINS, E [1 ]
机构
[1] HUGHES AIRCRAFT CO,MALIBU RES LAB,MALIBU,CA 90265
关键词
D O I
10.1049/el:19820016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:21 / 23
页数:3
相关论文
共 5 条
  • [1] HUANG C, 1981, IEEE MTFS INT MICROW, P25
  • [2] Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102
  • [3] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE
    OHATA, K
    ITOH, H
    HASEGAWA, F
    FUJIKI, Y
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1029 - 1034
  • [4] SUZUKI T, 1980, IEEE T MICROW THEORY, P367
  • [5] Yamasaki H., 1980, International Electron Devices Meeting. Technical Digest, P106