FORMATION OF BURIED LAYERS OF BETA-SIC USING ION-BEAM SYNTHESIS AND INCOHERENT LAMP ANNEALING

被引：29

作者：

REESON, KJ

HEMMENT, PLF

STOEMENOS, J

DAVIS, J

CELLER, GE

机构：

[1] ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SALONIKA,GREECE

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

[3] BRITISH TELECOM RES LABS,MARTLESHAM HEATH,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98953

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2242 / 2244

页数：3

共 13 条

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HEMMENT, PLF ;

REESON, KJ ;

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[4]

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[6] STRUCTURE AND ANNEALING PROPERTIES OF SILICON-CARBIDE THIN-LAYERS FORMED BY IMPLANTATION OF CARBON-IONS IN SILICON [J].

KIMURA, T ;

KAGIYAMA, S ;

YUGO, S .

THIN SOLID FILMS, 1981, 81 (04) :319-327

[7]

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[8]

MARGAIL J, 1985, ENERGY BEAM SOLID IN, V4, P519

[9] FABRICATION OF BURIED LAYERS OF SIO2 AND SI3N4 USING ION-BEAM SYNTHESIS [J].

REESON, KJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :269-278

[10]

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