SHALLOW ACCEPTOR STATES IN ZNTE AND CDTE

被引：73

作者：

CROWDER, BL

HAMMER, WN

机构：

来源：

PHYSICAL REVIEW | 1966年 / 150卷 / 02期

关键词：

D O I：

10.1103/PhysRev.150.541

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：541 / &

共 14 条

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].

AVEN, M ;

SEGALL, B .

PHYSICAL REVIEW, 1963, 130 (01) :81-+

[2] ELECTROELASTIC PROPERTIES OF SULFIDES, SELENIDES, AND TELLURIDES OF ZINC AND CADMIUM [J].

BERLINCOURT, D ;

SHIOZAWA, LR ;

JAFFE, H .

PHYSICAL REVIEW, 1963, 129 (03) :1009-&

[3]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P139

[4]

de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361

[5]

DEBYE PW, 1954, PHYS REV, V93, P705

[6] SHALLOW AND DEEP ACCEPTOR STATES IN CDTE [J].

LORENZ, MR ;

SEGALL, B .

PHYSICS LETTERS, 1963, 7 (01) :18-20

[7] SHALLOW-P ACCEPTOR LEVELS IN CDTE AND ZNTE [J].

MOREHEAD, FF ;

MANDEL, G .

PHYSICS LETTERS, 1964, 10 (01) :5-6

[8]

NEWMAN R, 1959, SOLID STATE PHYSICS, V3, pCH3

[9] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

[10]

SEITZ F, 1959, SOLID STATE PHYSI ED, V3, pCH3

← 1 2 →