CARRIER TRANSPORT SIMULATOR FOR SILICON BASED ON CARRIER DISTRIBUTION FUNCTION EVOLUTIONS

被引：10

作者：

IIZUKA, T

FUKUMA, M

机构：

[1] Microelectronics Research Labs., NEC Corporation, Sagamihara, Kanagawa, 229

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 01期

关键词：

D O I：

10.1016/0038-1101(90)90005-Y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Momentum space electron distributions in bulk silicon were calculated by the direct integration of the Boltzmann transport equation. This approach formulates carrier transitions or "transactions" between discretized states in momentum space, based on physical processes, such as drift and phonon scattering. This method outperforms the Monte Carlo method in determining the distribution functions. This merit enables hot carrier analysis to be implemented with a smaller CPU time. The transient and steady-state distributions are explained by the existence of lucky electrons, energy dependent scattering rates and the isotropic nature of intervalley scattering. © 1990.

引用

页码：27 / 34

页数：8

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