2.7-MU-M INGAASSB/ALGAASSB LASER-DIODES WITH CONTINUOUS-WAVE OPERATION UP TO -39-DEGREES-C

We have demonstrated continuous wave operation of 2.7-mu m InGaAsSb/AlGaAsSb multiquantum-well diode lasers up to a temperature of 234 K (-39 degrees C). These devices were grown by molecular-beam-epitaxy. They have a tendency to operate in a dominant single mode over well-defined temperature and current intervals. A comparison of spontaneous emission spectra shows that above threshold, the quasi-Fermi level is pinned and that most of the carriers are injected into nonlasing states. This effect leads to a rapid decrease of differential efficiency with increasing temperature. (C) 1995 American Institute of Physics.