QUARTER-MICROMETER GAAS SCHOTTKY-BARRIER DIODE WITH HIGH VIDEO RESPONSIVITY AT 118 MU-M

被引：17

作者：

PEATMAN, WCB ^{[1
]}

WOOD, PAD ^{[1
]}

PORTERFIELD, D ^{[1
]}

CROWE, TW ^{[1
]}

ROOKS, MJ ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quarter-micrometer diameter Schottky barrier mixer diode has been fabricated on n+ GaAs using electron beam lithography and reactive ion etching (RIE). The anodes were formed using a Pt/Au electroplate technique. The diode zero-bias capacitance of 0.25 fF and series resistance of about 25-OMEGA, measured at dc, correspond to a "figure-of-merit" cuttoff frequency of about 25 THz. The video responsivity at 118-mu-m (2540 GHz) was as high as 200 V/W, over three times higher than the best previously reported. The design, fabrication, and evaluation of this diode is described.

引用

页码：294 / 296

页数：3

共 9 条

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