THE FEASIBILITY OF USING TRIMETHYLAMINE ALANE AS AN A1 PRECURSOR FOR MOMBE

被引：5

作者：

ABERNATHY, CR ^{[1
]}

JORDAN, AS ^{[1
]}

PEARTON, SJ ^{[1
]}

REN, F ^{[1
]}

BAIOCCHI, F ^{[1
]}

BOHLING, DA ^{[1
]}

MUHR, GT ^{[1
]}

机构：

[1] AIR PROD & CHEM INC,ALLENTOWN,PA 18195

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 109卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90154-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of III-V Al-containing epitaxial structures by MOMBE has proven difficult due to the excessive oxygen and carbon contamination introduced by the Al source. Triethylaluminum (TEAl), the most commonly used precursor, produces unacceptable levels of both impurities in AlGaAs grown by MOMBE. We have grown AlGaAs films with excellent structural and optical properties using a novel source, trimethylamine alane (TMAAl). Photoluminescence intensities from AlGaAs grown by MOMBE at 500-degrees-C with TMAAl are comparable to those from material grown by MOCVD at 675-degrees-C using trimethylaluminum. In addition, carbon and oxygen levels in AlGaAs, as detected by SIMS, are drastically reduced in comparison to similar films produced with TEAl. We shall also discuss the effects of growth temperature and Al content on carbon and oxygen incorporation as well as crystallinity and provide preliminary device results on GaAs/AlGaAs HBTs prepared by the MOMBE technique.

引用

页码：31 / 36

页数：6

共 10 条

[1] GROWTH OF HIGH-QUALITY ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLAMINE ALANE [J].