ELECTROCHEMICAL ETCHING OF SI(001) IN NH4F SOLUTIONS - INITIAL-STAGE AND (111)MICROFACET FORMATION

被引：47

作者：

YAU, SL ^{[1
]}

KAJI, K ^{[1
]}

ITAYA, K ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT ENGN SCI,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.114087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ scanning tunneling microscopy (STM) has been used to examine the etching of an n-Si(001) electrode in 0.1 M NH4F. Cathodic polarization facilitated chemical etching of Si(001) to give {111} microfacets as a result of the tendency of Si to form a monohydride terminated surface. Time-dependent in situ STM atomic images were obtained to demonstrate the preferential etching at the kinks and steps. From the results of the time-dependent imaging, local etching rates were evaluated for the specific crystallographic directions. A Si(001):H-(1×1) square structure was also obtained, demonstrating the presence of dihydride configuration in the beginning of the etching.© 1995 American Institute of Physics.

引用

页码：766 / 768

页数：3

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