DEEP-LEVEL TRANSIENT SPECTROSCOPY OF NITROGEN-DOPED ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：20

作者：

GOTO, H

TANOI, T

TAKEMURA, M

IDO, T

机构：

[1] Department of Electrical Engineering, Chubu University, Kasugai, Aichi, 487

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7A期

关键词：

DLTS; FL; P-ZNSE; MOVPE; HOLE TRAP; NH3;

D O I：

10.1143/JJAP.34.L827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-doped ZnSe, which was grown on (001)GaAs substrate by metalorganic vapor phase epitaxy (MOVPE) using NH3, was characterized by deep-level transient spectroscopy (DLTS) and photoluminescence (PL). We observed three major deep hole traps of which the energy levels are 640+/-30 meV, 490+/-30 meV, 400+/-20 meV. The density of these traps depends on NH3 supply rate of the ratio of the molar supply rate of Se to Zn.

引用

页码：L827 / L829

页数：3