Preparation of homogeneous Cu(InGa)Se-2 films by selenization of metal precursors in H2Se atmosphere

被引：135

作者：

Marudachalam, M ^{[1
]}

Hichri, H ^{[1
]}

Klenk, R ^{[1
]}

Birkmire, RW ^{[1
]}

Shafarman, WN ^{[1
]}

Schultz, JM ^{[1
]}

机构：

[1] UNIV DELAWARE,DEPT CHEM ENGN,NEWARK,DE 19716

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 26期

关键词：

D O I：

10.1063/1.114424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Homogenous single phase Cu(InGa)Se-2 films with Ga/(In+Ga)=0.25-0.75 were formed by reacting Cu-Ga-In precursor films in H2Se followed by an anneal in Ar. X-ray diffraction and Auger analysis show that the metal precursors reacted only in H2Se were multiphase films having a layered CuInSe2/CuGaSe2 structure. Solar cells made with the multiphase films have properties similar to CuInSe2 devices. Cells made with the annealed single phase films behave like Cu(InGa)Se-2 devices with the band gap expected for the precursor composition. (C) 1995 American Institute of Physics.

引用

页码：3978 / 3980

页数：3