EFFECTS OF TRAP-STATE DENSITY REDUCTION BY PLASMA HYDROGENATION IN LOW-TEMPERATURE POLYSILICON TFT

被引：104

作者：

WU, IW

LEWIS, AG

HUANG, TY

CHIANG, A

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：123 / 125

页数：3

共 8 条

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[8] A SEMI-EMPIRICAL MODEL FOR THE FIELD-EFFECT MOBILITY OF HYDROGENATED POLYCRYSTALLINE-SILICON MOSFETS [J].

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