EFFECTS OF ERASE SOURCE BIAS ON FLASH EPROM DEVICE RELIABILITY

被引：30

作者：

SAN, KT ^{[1
]}

KAYA, C ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 01期

关键词：

D O I：

10.1109/16.370023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is concerned with the effects of the source bias during the erase operation on the reliability of Flash EPROM devices. It will be shown that positive charge in the tunnel oxide, mostly generated by the erase operation, is a major cause of the unintentional charge loss/gain mechanisms that disturb the data content of the memory cell. The effects of the erase source bias will be evaluated in the contest of the positive oxide charge generation and the resulting enhancement of the gate current that causes the data loss. An optimal source bias during erase, around 2 V for our samples, will be shown to cause the least positive oxide charge. A model based on the band-to-band tunneling-induced hole generation in Si and subsequent hole injection during the erase operation will be presented and discussed.

引用

页码：150 / 159

页数：10

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