INVESTIGATION OF DEEP LEVELS IN EPITAXIALLY GROWN CDS AND CDTE LAYERS

被引：15

作者：

SITTER, H

AS, D

HUMENBERGER, J

LOPEZOTERO, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(82)90329-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：229 / 233

页数：5

共 14 条

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[9] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

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[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF NI-DIFFUSED AND ZN-DIFFUSED VAPOR-PHASE EPITAXY N-GAAS [J].

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