DEEP LEVELS IN SEMICONDUCTORS - A QUANTITATIVE CRITERION

被引：41

作者：

JANTSCH, W ^{[1
]}

WUNSTEL, K ^{[1
]}

KUMAGAI, O ^{[1
]}

VOGL, P ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.5515

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5515 / 5518

页数：4

共 23 条

[1] BAND STRUCTURE AND IMPURITY STATES [J].

BASSANI, F ;

IADONISI, G ;

PREZIOSI, B .

PHYSICAL REVIEW, 1969, 186 (03) :735-&

[2] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J].

BASSANI, F ;

IADONISI, G ;

PREZIOSI, B .

REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) :1099-1210

[3] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].

CAMPHAUSEN, DL ;

JAMES, HM ;

SLADEK, RJ .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1899-+

[4] EXCITED-STATES AT DEEP CENTERS IN SI-S AND SI-SE [J].

GRIMMEISS, HG ;

SKARSTAM, B .

PHYSICAL REVIEW B, 1981, 23 (04) :1947-1960

[5] TELLURIUM DONORS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

ENNEN, H ;

SCHIRMER, O ;

SCHNEIDER, J ;

WORNER, R ;

HOLM, C ;

SIRTL, E ;

WAGNER, P .

PHYSICAL REVIEW B, 1981, 24 (08) :4571-4586

[6] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].

GRIMMEISS, HG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376

[7] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745

[8] DEEP SULFUR-RELATED CENTERS IN SILICON [J].

GRIMMEISS, HG ;

JANZEN, E ;

SKARSTAM, B .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4212-4217

[9] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].

HJALMARSON, HP ;

VOGL, P ;

WOLFORD, DJ ;

DOW, JD .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813

[10]

HJALMARSON HP, UNPUB, P94108

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