EFFECTS OF ELECTRIC-FIELD ON ZNSE/ZNS STRAINED-LAYER SUPERLATTICES

被引：17

作者：

YOKOGAWA, T

SAITOH, T

NARUSAWA, T

机构：

[1] Opto-Electronics Laboratory, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka, 570

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

12;

D O I：

10.1016/0022-0248(90)91035-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoluminescence measurements have been carried out in ZnSe/ZnS strained layer superlattices (SLSs) subjected to an electric field. The luminescence quenching and the peak shift toward the lower energy side were observed. These phenomena are related to the field-induced electron-hole separation in the ZnSe well. We have successfully obtained optical modulators using ZnSe/ZnS SLSs and demonstrated the optical switching operation caused by the electric-field-induced absorption change. Furthermore, coherent light of 0.5235 and 0.436 μm wavelengths has been obtained as the second harmonic wave in ZnSe/ZnS SLSs. © 1989.

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收藏

页码：550 / 553

页数：4

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