2-DIMENSIONAL CARRIER PROFILING

被引：18

作者：

VANDERVORST, W ^{[1
]}

CLARYSSE, T ^{[1
]}

VANHELLEMONT, J ^{[1
]}

ROMANORODRIGUEZ, A ^{[1
]}

机构：

[1] UNIV BARCELONA,CATEDRA ELECTR,E-08028 BARCELONA,SPAIN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 01期

关键词：

D O I：

10.1116/1.586373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional (2D) carrier profiling is an important aspect of the characterization of ultra-large-scale integrated devices. Through a special measurement procedure and sample preparation it has been shown that the use of spreading resistance profiling (SRP) for this application is possible with 10-20 nm spatial resolution. Extension to the quantitative determination of a three-dimensional profile appears to be possible. Higher spatial resolution has been achieved using transmission electron microscopy (TEM) based methods whereby chemical etching and electron irradiation are investigated. For these methods detection limits down to 5 x 10(17) cm-3 have been determined. Based on the properties of SRP (sensitivity and quantification) and TEM (high spatial resolution, on-chip application) both methods are found to be highly complementary for 2D carrier profiling.

引用

页码：449 / 455

页数：7

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