RESONANT RAMAN LINE-SHAPE OF OPTIC PHONONS IN GAAS/ALAS MULTIPLE-QUANTUM WELLS

被引：66

作者：

SHIELDS, AJ ^{[1
]}

CARDONA, M ^{[1
]}

EBERL, K ^{[1
]}

机构：

[1] TOSHIBA CAMBRIDGE RES CTR,CAMBRIDGE CB4 4WE,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.72.412

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the dependence of the optic phonon Raman line shape of GaAs/AlAs multiple quantum wells on photon energy and AlAs layer thickness. Broad features due to the forbidden interface modes, observed more strongly for outgoing than for incoming resonance, are induced by elastic scattering of the photoexcited exciton. The interface feature in the GaAs-like phonon region has several minima due to anticrossings of its dispersion with the odd-order confined modes. This corrects previous interpretations of these structures as due to higher even-order confined modes.

引用

页码：412 / 415

页数：4

共 17 条

[1] DOUBLY AND TRIPLY RESONANT RAMAN-SCATTERING BY LO PHONONS IN GAAS/ALAS SUPERLATTICES [J].