DISSOLUTION INHIBITION-TYPE PHOTORESISTS FOR DEEP-UV LITHOGRAPHY

被引:3
作者
FUNHOFF, D
BINDER, H
NGUYENKIM, S
SCHWALM, R
机构
关键词
D O I
10.1016/0033-0655(92)80020-W
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
A short introduction to photolithography with an emphasis on the classification of photoresists and the basic chemistry of conventional resists is given. The chemistry of positive type photoresists used for deep-UV lithography is reviewed and new developments in this field presented. The introduction of novel sulphonium compounds (SUCCESS) to inhibit the dissolution of poly(p-hydroxystyrene), the use of non-photoactive dissolution inhibitors together with acid generators and the protection of hydroxy groups in poly(p-hydroxystyrene) to decrease its solubility present ways of obtaining resists with high sensitivity and resolution.
引用
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页码:289 / 300
页数:12
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