THRESHOLD VOLTAGE MISMATCH IN SHORT-CHANNEL MOS-TRANSISTORS

被引：27

作者：

STEYAERT, M ^{[1
]}

BASTOS, J ^{[1
]}

ROOVERS, R ^{[1
]}

KINGET, P ^{[1
]}

SANSEN, W ^{[1
]}

GRAINDOURZE, B ^{[1
]}

PERGOOT, A ^{[1
]}

JANSSENS, E ^{[1
]}

机构：

[1] ALCATEL MIETEC, B-9700 OUDENAARDE, BELGIUM

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 18期

关键词：

CMOS INTEGRATED CIRCUITS; TRANSISTORS;

D O I：

10.1049/el:19940999

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold voltage matching dependency on device area is investigated for a standard 1.2 mu m CMOS technology. A deviation from the linear dependency of the threshold voltage matching on the inverse of the square root of the effective channel area is observed for transistors of 1.2 mu m channel length.

引用

页码：1546 / 1548

页数：3

共 6 条

[1]

ABEL CJ, 1993, 1993 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS : PROCEEDINGS, VOLS 1-4 ( ISCAS 93 ), P1401, DOI 10.1109/ISCAS.1993.393994

[2] CHARACTERIZATION AND MODELING OF MISMATCH IN MOS-TRANSISTORS FOR PRECISION ANALOG DESIGN [J].