TIGHT-BINDING CALCULATION OF ORBITAL RELAXATIONS AND HOPPING INTEGRAL MODIFICATIONS AROUND VACANCIES AND ANTISITE DEFECTS IN GAAS

被引：13

作者：

VANDERREST, J ^{[1
]}

PECHEUR, P ^{[1
]}

机构：

[1] ECOLE NATL SUPER MET & IND MINES,PHYS SOLIDE LAB,F-54042 NANCY,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / 11期

关键词：

D O I：

10.1051/jphys:0198300440110129700

中图分类号：

学科分类号：

摘要：

引用

页码：1297 / 1305

页数：9

共 32 条

[1]

ALLAN G, 1970, ANN PHYS-PARIS, V5, P169

[2] LOCALIZED ORBITALS FOR MOLECULAR QUANTUM THEORY .I. HUCKEL THEORY [J].

ANDERSON, PW .

PHYSICAL REVIEW, 1969, 181 (01) :25-&

[3] SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J].

BACHELET, GB ;

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1981, 24 (02) :915-925

[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[5] ELECTRONIC-STRUCTURES OF LAYER AND CHAIN ELEMENTS BY A LOCAL ORBITAL METHOD [J].

BULLETT, DW .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :1063-1074

[6] CHEMICAL PSEUDOPOTENTIAL APPROACH TO COVALENT BONDING .1. [J].

BULLETT, DW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (17) :2695-2706

[7]

BULLETT DW, 1980, SOLID STATE PHYS, V35, P129

[8] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[9] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].

CHIANG, TC ;

KNAPP, JA ;

AONO, M ;

EASTMAN, DE .

PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522

[10] ATOMIC SCREENING CONSTANTS FROM SCF FUNCTIONS [J].

CLEMENTI, E ;

RAIMONDI, DL .

JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (11) :2686-&

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