XPS STUDY IN CEAG AND EUCU2SI2 AT LOW-TEMPERATURES DOWN TO 4-K

被引:11
作者
TAKIGAWA, Y [1 ]
NOGUCHI, S [1 ]
OKUDA, K [1 ]
机构
[1] UNIV OSAKA PREFECTURE,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
关键词
Electronic Properties - Photoemission - Spectroscopy; X-Ray;
D O I
10.1016/0304-8853(88)90418-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic structure of CeAg and EuCu2Si2 was investigated by XPS measurements in a temperature range from 3.7 to 300 K. When the temperature was decreased, the mixing ratio of Eu3+/ Eu2+ in EuCu2Si2 was increased showing a maximum near 50 K and then decreased. XPS measurements were done by using a combined type of spectrometer (Shimazu ASIX-1000) with the Mg-Kα line (1253.6 eV) as an exciting source. The spectrometer has four functions: XPS (X-ray photoemission spectroscopy), AES (auger-electron spectroscopy), SIMS (secondary ion mass spectroscopy) and ISS (ion scattering spectroscopy).
引用
收藏
页码:345 / 346
页数:2
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