PRESSURE STUDIES OF TUNNELING PROCESSES IN A DOUBLE-BARRIER STRUCTURE WITH A 2-DIMENSIONAL EMITTER CONTACT

被引：4

作者：

DINIZ, R ^{[1
]}

SUSKI, T ^{[1
]}

BERTHOLD, K ^{[1
]}

SMOLINER, J ^{[1
]}

GORNIK, E ^{[1
]}

RIECHERT, H ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 02期

关键词：

D O I：

10.1088/0268-1242/7/2/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant tunnelling experiments under hydrostatic pressures up to 15 kbar in a double-barrier structure with a two-dimensional emitter pre-well are reported. At room temperature the structure shows two transitions in its tunnelling characteristics as a function of pressure. We associate these transitions with the enhancement of the GAMMA-X tunnelling in the collector and emitter barriers. At lower temperatures these features are less pronounced. In addition we estimate the pressure coefficient for the decrease in the energy of the X minimum in relation to the GAMMA minimum in Al0.6Ga0.4As.

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收藏

页码：271 / 274

页数：4

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