TEMPERATURE LIMITATION ON CONTINUOUS OPERATION OF GAAS LASERS

[1] ARNOLD K, PRIVATE COMMUNICATIO

[2] LASER CONDITIONS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 699 - 703

[3] ROOM TEMPERATURE OPERATION OF GALLIUM ARSENIDE LASERS [J]. PHYSICS LETTERS, 1963, 4 (06): : 330 - 331

[4] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[5] DILL FH, 1963, SOLIDSTATE CIRCUITS

[6] DRABBLE JR, 1961, THERMAL CONDUCTION S, P179

[7] THRESHOLD CURRENTS FOR LINE NARROWING IN GAAS JUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1791 - &

[8] NATHAN MI, 1963, 3 INT S QU EL PAR

[1] ARNOLD K, PRIVATE COMMUNICATIO

[2] LASER CONDITIONS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 699 - 703

[3] ROOM TEMPERATURE OPERATION OF GALLIUM ARSENIDE LASERS [J]. PHYSICS LETTERS, 1963, 4 (06): : 330 - 331

[4] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174

[5] DILL FH, 1963, SOLIDSTATE CIRCUITS

[6] DRABBLE JR, 1961, THERMAL CONDUCTION S, P179

[7] THRESHOLD CURRENTS FOR LINE NARROWING IN GAAS JUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1791 - &

[8] NATHAN MI, 1963, 3 INT S QU EL PAR